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 2SA1013
Elektronische Bauelemente -1A, -160V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
FEATURE
High VoltageVCEO= -160V Large Continuous Collector Current Capability Complementary to 2SC2383 TO-92L
G H
1Emitter 2Collector 3Base
J A D
CLASSIFICATION OF hFE
Product-Rank Range
2SA1013-R 60~120 2SA1013-O 100~200 2SA1013-Y 160~320
K
REF.
B
E
C
F
A B C D E F G H J K
Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80
Collector
2 3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
-160 -160 -6 -1 0.9 150, -55~150
Unit
V V V A W C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT COb
Min.
-160 -160 -6 60 15 -
Typ.
-
Max.
-1 -1 320 -1.5 -0.75 35
Unit
V V V A A
Test Conditions
IC = -100A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -150V, IE = 0 VEB = -6V, IC = 0 VCE = -5V, IC = -200mA
V V MHz pF
IC = -500mA, IB = -50mA VCE = -5V, IC = -5mA VCE = -5V, IC = -200mA VCB = -10V, IE = 0, f = 1 MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 1 of 2
2SA1013
Elektronische Bauelemente -1A, -160V PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. B
Page 2 of 2


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